| Journals (International): |
- Ujjal Das, Snigdha Bhattacharjee, Pranab Kumar Sarkar, Asim Roy, A multi-level bipolar memristive device based on visible light sensing MoS2 thin film, Materials Research Express, 2019
- Ujjal Das, Snigdha Bhattacharjee, Barnali Mahato, Manoj Prajapat, Pranab Sarkar, Asim Roy, Uniform, large-scale growth of WS2 nanodomains via CVD technique for stable non-volatile RRAM application,Materials Science in Semiconductor Processing, 2020
- Ujjal Das, Anupriya Nyayban, Bappi Paul, Arabinda Barman, Pranab Sarkar, Asim Roy, Compliance Current-Dependent Dual-Functional Bipolar and Threshold Resistive Switching in All-Inorganic Rubidium Lead-Bromide Perovskite-Based Flexible Device, ACS Applied Electronic Materials, 2020
- Abubakkar Siddik, Prabir Kumar Haldar, Prabir Garu, Snigdha Bhattacharjee, Ujjal Das, Arabinda Barman, Asim Roy, Pranab Kumar Sarkar, Enhancement of data storage capability in a bilayer oxide-based memristor for wearable electronic applications,Journal of Physics D: Applied Physics, 2020
- Ujjal Das, Dip Das, Bappi Paul, Tridip Rabha, Soumya Pattanayak, Aloke Kanjilal, Snigdha Bhattacharjee, Pranab Sarkar, Asim Roy, Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3–xClx Perovskite for RRAM Application, ACS Applied Materials & Interfaces, 2020
- Abubakkar Siddik, Prabir Kumar Haldar, Tufan Paul, Ujjal Das, Arabinda Barman, Asim Roy, Pranab Kumar Sarkar, Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systemsNanoscale, 2021
- Ujjal Das, Pranab Sarkar, Bappi Paul, Asim Roy, Halide perovskite two-terminal analog memristor capable of photo-activated synaptic weight modulation for neuromorphic computing, Applied Physics Letters, 2021
- The Journal of Physical Chemistry C,Improvement of the Resistive Switching Characteristics upon Halide Mixing in an All-Inorganic RbPbI3 Perovskite Polymer Composite Based Flexible Device,Ujjal Das, Anurag Dehingia, Bappi Paul, Pranab Kumar Sarkar, Asim Roy, 2021
- Anurag Dehingia, Ujjal Das, Asim Roy, Partial replacement of B-site cation to stabilize the optically active cubic phase of FAPbI3 for optoelectronic applications,Materials Today: Proceedings, 2022
- Ujjal Das, Pranab Kumar Sarkar, Dip Das, Bappi Paul, Asim Roy,Influence of Nanoscale Charge Trapping Layer on the Memory and Synaptic Characteristics of a Novel Rubidium Lead Chloride Quantum Dot Based Memristor, Advanced Electronic Materials, 2022
- Nipom Sekhar Das, Saikat Mitra, Avijit Chowdhury, Asim Roy, Nonvolatile memristive devices based on in situ functionalized layered rGO-MoS2 nanocomposites, ECS Journal of Solid State Science and Technology 2022
- Anurag Dehingia, Ujjal Das, Asim Roy,Compositional Engineering in α-CsPbI3 toward the Efficiency and Stability Enhancement of All Inorganic Perovskite Solar Cells, ACS Applied Energy Materials, 2022
- Nipom Sekhar Das, Koustav Kashyap Gogoi, Avijit Chowdhury, Asim Roy, Investigation of optical and structural properties of synthesized graphene oxide and thermally reduced graphene oxide, Materials Today: Proceedings, 2022
- Anurag Dehingia, Ujjal Das, Asim Roy, Interface layer modulation of an all-inorganic perovskite solar cell to study the carrier transport mechanism, Physica Scripta, 2022
- Electrical Reliability, Multilevel Data Storage and Mechanical Stability of MoS2-PMMA Nanocomposite Based Non-volatile Memory Device S Bhattacharjee, P Sarkar, M Prajapat, A Roy Journal of Physics D: Applied Physics
- Probing electron density across Ar+ irradiation-induced self-organized TiO2− x nanochannels for memory application A Barman, CP Saini, PK Sarkar, A Roy, B Satpati, D Kanjilal, SK Ghosh, … Applied Physics Letters 108 (24), 244104
- Multilevel programming in Cu/NiO y/NiO x/Pt unipolar resistive switching devices PK Sarkar, S Bhattacharjee, A Barman, A Kanjilal, A Roy Nanotechnology 27 (43), 435701
- Multilevel resistance state of Cu/La2O3/Pt forming-free switching devices PK Sarkar, M Prajapat, A Barman, S Bhattacharjee, A Roy Journal of Materials Science 51 (9), 4411-4418
- Interfacial and electrical properties of radio frequency sputtered ultra-thin TiO2 film for gate oxide applications M Nath, A Roy Journal of Materials Science: Materials in Electronics 26 (11), 9107-9116
- Morphological, Optical, and Raman Characteristics of ZnO Nanoflowers on ZnO-Seeded Si Substrates Synthesized by Chemical Method N Roy, A Chowdhury, T Paul, A Roy Journal of Nanoscience and Nanotechnology 16 (9), 9738-9745
- Improvement of Reliability of Polymer Nanocomposite Based Transparent Memory Device by Oxygen Vacancy Rich ZnO Nanorods S Bhattacharjee, PK Sarkar, N Roy, A Roy Microelectronic Engineering
- 10 2014 Zinc vacancy mediated structural phase transition and photoluminescence in nanocrystalline ZnS thin films N Roy, A Roy Journal of Materials Science: Materials in Electronics
- Observation of negative differential resistance and electrical bi-stability in chemically synthesized ZnO nanorods N Roy, A Chowdhury, A Roy Journal of Applied Physics
- Incorporation of SnO 2 nanoparticles in PMMA for performance enhancement of a transparent organic resistive memory device PK Sarkar, S Bhattacharjee, M Prajapat, A Roy RSC Advances 5 (128), 105661-105667
- A. Roy et al Characteristics of Strontium Bismuth Tantalate Film with ZrO2 buffer Layer for Non-Volatile Memory Application Integrated Ferroelectrics Pp.119-124, Vol.124, Issue no.1 2011
- B. Panda A. Roy et al Thickness and temperature dependent electrical characteristics of crystalline BaxSr1-x TiO3 thin films,, Journal of Applied Physics pp. 64116–64123 Vol. 101, No.6, 2007
- A. Roy et al Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 as buffer layer, J. Phys.D: Appl. Phys.pp. 95408–95416 Vol. 41, No. 9, 2008
- A. Roy et al Interfacial and electrical properties of SrBi2Ta2O9/ZrO2/Si heterostructures for ferroelectric memory devices, Journal of Applied Physics pp. 64103–64108 Vol. 104, No.6, 2008
- A. Roy et al Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films Journal of Applied Physics Pp.44103–44108 Vol. 105, No.4, 2009
|
